葛延峰,蒋百灵,王聪婕,龙燚

• 1:西安理工大学材料科学与工程学院

摘要(Abstract)：

为了探讨通电时间对镁合金微弧氧化陶瓷层形成和生长过程的影响规律,利用高速相机记录微弧放电状态,采用扫描电子显微镜观察膜层表面形貌,借助电化学测试分析膜层表面阻值,根据电压变化曲线计算能量消耗。结果表明:随微弧氧化时间增加,镁合金表面微弧放电斑点由边缘逐渐扩展至整个表面,放电强度增大且数量增多;微弧氧化初期,样品表面有含氧元素的不规则颗粒生成,数量逐渐增多,直至起弧瞬间形成孔径小于0.2μm的放电微孔;随微弧氧化时间增加镁合金表面阻值增大,直至3.1×104Ω时出现明显微弧放电现象;镁合金微弧氧化各时间段所消耗能量逐渐升高,陶瓷层生长阶段能量消耗54.62 k J明显高于起弧阶段的7.98 k J。

关键词(KeyWords)： 镁合金;微弧氧化;微观结构;放电状态;能量消耗

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金(51071121、51271144)

作者(Author): 葛延峰,蒋百灵,王聪婕,龙燚

DOI: 10.13289/j.issn.1009-6264.2014.12.034

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