马天军,陈振海,俞世吉,孙建海,伊福廷,刘濮鲲

• 1:中国科学院电子学研究所
• 2:中国科学院高能物理研究所
• 3:北京大学应用电子学研究所

摘要(Abstract)：

在充分考虑电子枪栅极的工作环境后,对铪(Hf)栅极进行了800、900和1000℃的真空退火处理,对其组织、织构特点进行了分析,并利用离子束辅助沉积技术在Ba-W阴极表面分别沉积金属钼膜和铪膜,以模拟栅控行波管中钼栅极和铪栅极表面吸附阴极蒸发物质时的表面状态,测试了这两种栅极表面"热电子发射"能力和"二次电子发射"系数。结果表明,随着退火温度的升高,铪(Hf)栅极的结晶度、晶粒尺寸增加,织构减少,铪的最佳退火温度为900℃,铪栅极表面吸附的阴极发射物质要远少于钼栅极,用金属铪作栅极材料能有效抑制栅电子发射。

关键词(KeyWords)： 退火;铪;织构;栅发射;二次电子发射

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金(51071147)

作者(Author): 马天军,陈振海,俞世吉,孙建海,伊福廷,刘濮鲲

DOI: 10.13289/j.issn.1009-6264.2015.s1.041

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