张鹏,韩志豪,张弘斌,周海萍

• 1:东北大学材料科学与工程学院材料各向异性与织构教育部重点实验室
• 2:山东科技大学机械电子工程学院

摘要(Abstract)：

采用电子背散射衍射(EBSD)技术研究了脉冲电流处理(EPT)对GH3030合金低ΣCSL晶界的影响，分析了合金低ΣCSL晶界在脉冲电流处理下的生长机制，采用电化学腐蚀实验研究了脉冲电流处理对GH3030合金耐腐蚀性能的影响，分析了低ΣCSL晶界与合金耐腐蚀性的内在联系。同时与经常规退火处理的合金作对比。结果表明：经不同工艺的脉冲电流处理后，合金中Σ3~n(n=1, 2, 3)晶界比例总体上随热处理温度的升高及热处理时间的增加而提高，合金的耐晶间腐蚀性能也随之增强。与常规退火处理相比，脉冲电流处理可以在较短时间内显著提高合金中Σ3~n(n=1, 2, 3)晶界的比例。经850℃脉冲电流处理30 min后冷轧态GH3030合金的Σ3~n(n=1, 2, 3)晶界比例最高，耐腐蚀性能最好。

关键词(KeyWords)： 冷轧GH3030合金;脉冲电流处理;耐腐蚀性能;低角度晶界

Abstract:

Keywords:

基金项目(Foundation):

作者(Author): 张鹏,韩志豪,张弘斌,周海萍

DOI: 10.13289/j.issn.1009-6264.2022-0252

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