脉冲偏压对贫铀表面磁控溅射CrNx薄膜结构与性能的影响Effect of pulse bias voltage on microstructure and properties of CrNx film prepared by magnetron sputtering on uranium
朱生发,吴艳萍,刘天伟,黄河,江帆,唐凯,魏强
摘要(Abstract):
为改善金属铀基体的抗腐蚀性能,采用非平衡磁控溅射离子镀技术在不同偏压下于金属铀表面制备CrNx薄膜。采用SEM和AFM研究了薄膜形貌和表面粗糙度,采用X射线光电子能谱研究了薄膜表面的元素分布及化学价态。试验结果表明,采用磁控溅射在较低脉冲偏压下沉积的CrNx薄膜晶粒较细小,偏压越高,表面粗糙度越大。生成的薄膜为Cr+CrN+Cr2N混合结构,并含有少量的Cr2O3,随着偏压的升高,金属态Cr的含量减少,而铬的氮化物的含量增加,所制备薄膜的自然腐蚀电位升高,腐蚀电流密度减小。偏压为-800 V时,所制备的薄膜具有较好的抗腐蚀性能。
关键词(KeyWords): 贫铀;非平衡磁控溅射;CrNx薄膜
基金项目(Foundation): 中国工程物理研究院科学技术发展基金(2009B0203019)
作者(Author): 朱生发,吴艳萍,刘天伟,黄河,江帆,唐凯,魏强
DOI: 10.13289/j.issn.1009-6264.2012.05.028
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