苏辉,王俊升,薛程鹏,王硕,田光元,杨兴海

• 1:北京理工大学材料科学与工程学院
• 2:北京理工大学前沿交叉科学研究院

摘要(Abstract)：

近年来，集成计算材料工程(ICME)已成为设计新材料和制造工艺最强大的材料基因组工程(MGE)方法之一。采用基于位错密度的晶体塑性相场损伤模型定性和定量分析了Al_2Y相对镁基体局部应力、应变、位错密度、滑移系统以及损伤行为的影响。结果表明：镁合金在塑性变形过程中，损伤驱动力与晶粒基面滑移的施密特因子(SF)呈非常明显的线性关系，SF<3的晶粒，损伤驱动力较大，SF>3的晶粒，损伤驱动力较小。镁基体中损伤的起源和传播还取决于Al_2Y相的大小和位置。位于晶界处的Al_2Y相会引起较大的应力集中，导致损伤驱动力以倾斜的角度(约45°)传播；较小的和位于晶内的Al_2Y相的损伤驱动力较小，在变形过程中起到强化镁基体的作用。

关键词(KeyWords)： 镁合金;位错密度;相场损伤模型;晶体塑性有限元;施密特因子

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金面上项目(52073030)，国家自然科学基金区域创新联合基金重点项目(U20A20276)

作者(Author): 苏辉,王俊升,薛程鹏,王硕,田光元,杨兴海

DOI: 10.13289/j.issn.1009-6264.2023-zt05

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