徐义库,刘林,张军,LSER Wolfgang,FRONTZEK Matthias

• 1:长安大学材料科学与工程学院
• 2:西北工业大学凝固技术国家重点实验室
• 3:莱布尼兹固态及材料科学研究所
• 4:德累斯顿工业大学固态物理所

摘要(Abstract)：

采用光辐射加热悬浮区熔法以3 mm/h的生长速度成功制备了Tb2PdSi3单晶。通过分析得知,该化合物为同成分熔融化合物,熔点约为1700℃。和其它R2PdSi3型化合物(R为稀土元素)不同,在单晶基体中没有发现TbSi沉淀,分析原因可能是因为晶体中Tb含量略高于化学计量比。采用X射线Laue背散射实验对晶体的晶格结构和高完整性进行了验证,并对定向单晶的a和c方向磁化率-温度曲线进行了测定。

关键词(KeyWords)： 悬浮区熔;单晶生长;稀土化合物;磁性能

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金青年基金项目(51301021);; 中央高校基本科研业务费专项基金项目(2013G1311051);; 西北工业大学凝固技术国家重点实验室开放课题(SKLSP201302)

作者(Author): 徐义库,刘林,张军,LSER Wolfgang,FRONTZEK Matthias

DOI: 10.13289/j.issn.1009-6264.2014.04.003

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