掺杂浓度对Al-F共掺杂ZnO透明导电薄膜性能的影响Influence of dopant concentration on properties of Al-F co-doped ZnO thin films
吕珺,周丽萍,汪冬梅,吴玉程,郑治祥
摘要(Abstract):
通过溶胶-凝胶法制备了不同Al-F掺杂浓度的ZnO薄膜,研究了薄膜的晶体结构、表面形貌、电阻率和透光性随着掺杂浓度的变化情况。结果表明:制备的ZnO∶F∶Al薄膜具有高度的C轴择优取向性,薄膜表面平整、晶粒均匀致密。当Al3+和F-的掺杂浓度皆为0.75at%时,薄膜的平均晶粒尺寸最大为43.8nm;导电性能最好,电阻率可低至1.02×10-2Ω.cm;在可见光范围内薄膜的平均透过率超过90%,吸收边出现明显的蓝移现象。
关键词(KeyWords): ZnO薄膜;溶胶-凝胶;Al-F共掺杂;掺杂浓度;光电性能
基金项目(Foundation): 合肥工业大学中青年科技创新群体专项(103-037016)
作者(Author): 吕珺,周丽萍,汪冬梅,吴玉程,郑治祥
参考文献(References):
- [1]Maldonado A,Tirado-Guerra S,Melendez-Lira M,et al.Physical properties of ZnO∶F obtained from a fresh and aged solution of zinc acetate and zincacetylacetonate[J].Solar Energy Materials&Solar Cells,2006,90:742-752.
- [2]Dela M,Olvera L,Maldonado A,et al.Characteristics of ZnO∶F thin films obtained by chemical spray:Effect of the molarity and the doping concentration[J].Thin Solid Films,2001,394:242-249.
- [3]Dela M,Olvera L,Maldonado A.Characteristics of ZnO∶Ga thin films prepared by chemical spray using two different Zn and Ga precursors[J].Phys StatSol,2003,(a)196(2):410-415.
- [4]Delia Cristina Altamirano-Juarez,Gerardo Torres-Delgado,et al.Low-resistivity ZnO∶F∶Al transparent thin films[J].Solar Energy Materials&Solar Cells,2004,82:35-43.
- [5]吕敏峰,崔作林,张志.Sol-Gel法制备ZnO∶Al透明导电薄膜[J].材料科学与工程学报,2003,21(2):224-227.L Min-feng,CUI Zuo-lin,ZHANG Zhi-kun.Aluminum-doped ZnO transparent conducting thin films by the Sol-Gel method[J].Journal of Materials Science&Engineering,2003,21(2):224-227.
- [6]Deng H,Russell J J,Lamb R N,et al.Microstructure control of ZnO thin films prepared by single source chemical vapor deposition[J].Thin Solid Films,2004,458:43-46.
- [7]Puchert M K,Timbrell P Y,Lamb R N.Postdeposition annealing of radio frequency magnetron sputtered ZnO films[J].J Vac Sci Technol A,1996,14(4):2220-2230.
- [8]Cullity B D.Elements of X-Ray Diffractions[M].Reading,MA:Addition-Wesley,1978:102.
- [9]ZHANG S B,WEI S-H,ZUNGER A.Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO[J].Phys Rev B,2001,63:075205-075208.
- [10]葛春桥,夏志林,郭爱云.掺杂浓度对AZO薄膜结构和性能的影响[J].电子元件与材料,2004,23(9):31-33.GE Chun-qiao,XIA Zhi-lin,GUO Ai-yun.Influence of the dopant concentration on its microstructure and properties of AZO film[J].Electronic Components&Materials,2004,23(9):31-33.
- [11]陈猛,白雪冬,黄荣芳,等.In2O3∶Sn和ZnO∶Al透明导电薄膜的结构及其导电机制[J].半导体学报,2000,21(4):394-399.CHEN Meng,BAI Xue-dong,HUANG Rong-fang,et al.Structure and conductive mechanism of ITO and ZAO films[J].Chinese Journal of Semiconductors,2000,21(4):394-399.
- [12]Guillen-Santiago A,Dela M,Olvera L,et al.Electrical,structural and morphological properties of chemically sprayed F-doped ZnO films:effect of the aging-time of the starting solution,solvent and substrate temperature[J].Phys Stat Sol A,2003,201,(5):952-959.
- [13]徐毓龙.材料物理导论[M].成都:电子科技大学出版社,1994.
- [14]SUN Chao,CHEN Meng.Microstructure and properties of transparent conductive oxide ZnO∶Al(ZAO)thin films[J].Chin J Mater Res,2002,16(4):113-119.
文章评论(Comment):
|
||||||||||||||||||
|
||||||||||||||||||