姜雷,刘丁,赵跃,焦尚彬

• 1:西安理工大学国家联合晶体生长设备及系统集成工程研究中心

摘要(Abstract)：

设计一种二维轴对称和三维混合的数值计算模型,对水平磁场作用下的直拉硅单晶生长进行了研究。结果表明,由于水平磁场的非轴对称性,只有在三维模型中才能获得确切的温度、速度分布。温度场、熔体中的流函数和固液界面形状在水平磁场的作用下也具有非轴对称性,这种非轴对称性随磁场强度的变化而改变。提高晶体旋转速度有利于减小固液界面形状的非轴对称性,并会改变界面形状的凹凸程度;提高坩埚旋转速度则有利于提高熔体中温度分布的均匀性,但会扩大熔体中的径向温度梯度。

关键词(KeyWords)： 直拉硅单晶;水平磁场;数值模拟;非轴对称性

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金(61075044);; 教育部科学技术研究重点项目(212169)

作者(Author): 姜雷,刘丁,赵跃,焦尚彬

DOI: 10.13289/j.issn.1009-6264.2013.07.002

参考文献(References)：

• [1]花聚团,杨德仁,席珍强,等.快速热处理法制备单晶硅太阳能电池[J].材料热处理学报,2006,27(6):10-13.HUA Ju-tuan,YANG De-ren,XI Zhen-qiang,et al.Monocry stalline silicon solar cells fabricated by rapid thermal processing[J].Transactions ofMaterials and Heat Treatment,2006,27(6):10-13.
• [2]周潘兵,柯航,周浪.热处理和冷却速率对直拉单晶硅少子寿命的影响[J].材料热处理学报,2012,33(8):23-27.ZHOU Pan-bing,KE Hang,ZHOU Lang.Effect of heat treatment and cooling rate on minority carrier lifetime of Czchralski silicon[J].Transactions ofMaterials and Heat Treatment,2012,33(8):23-27.
• [3]Xianrong C,Li Y S,Jiemin Z.Three dimensional simulation of melt flow in Czochralski crystal growth with steady magnetic fields[J].Journal ofCrystal Growth,2012,340(1):135-141.
• [4]Bok-Cheol S,In-Kyoo L,Kwang-Hun K,et al.Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field[J].Journal of CrystalGrowth,2005,275(3):455-459.
• [5]Young-ho H,Bok-cheol S,Kwang-bo S.Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals[J].Journal of Crystal Growth,2006,295(2):141-147.
• [6]Koichi K,Akimasa T,Hideo I,et al.Active control of melt convection of silicon by electromagnetic force under cusp-shaped magnetic fields[J].Materials Science in Semiconductor Processing,2002,5(4):341-345.
• [7]Lijun L,Koichi K.Partly three-dimensional global modeling of a silicon Czochralski furnace.I.Principles,formulation and implementation of the model[J].International Journal of Heat and Mass Transfer,2005,48(21):4481-4491.
• [8]Yoan C,Olivier M,Nathalie V B,et al.Effective simulation of the effect of a transverse magnetic field(TMF)in Czochralski Silicon growth[J].Journal of Crystal Growth,2012,360(1):18-24.
• [9]林明献.矽晶圆半导体材料技术[M].台湾:全华图书股份有限公司,2007.

文章评论(Comment)：