氢终结金刚石表面P型导电沟道稳定性研究Stability of P-type conductive channel on H-terminated diamond films
刘金龙,李成明,陈良贤,刘青,王晶晶,冯志红
摘要(Abstract):
原位测试了氢终结金刚石膜在氮气保护和大气气氛中加热时的表面导电特征,分析并讨论了该导电沟道的高温稳定性。结果表明,室温下氢终结金刚石表面电导率均在10~(-5)S量级。随着温度的升高,N_2气氛下的金刚石膜表面电导率呈现逐渐下降的趋势,而大气中加热的金刚石膜表面电导率则出现了明显的台阶式降低。对于后者而言,金刚石表面在120℃发生的第二层水分子脱附和230℃下CH基团的分解,是其电导率发生阶梯式下降的主要原因。而在氮气(N_2)气氛下氢终结金刚石膜表面导电沟道表现出更高的分子水脱附温度(300℃)和氢分解温度(400℃),表明气氛保护可有效提高氢终结金刚石表面导电沟道的稳定性。
关键词(KeyWords): 氢终结;金刚石膜;表面导电性;稳定性
基金项目(Foundation): 国家自然科学基金(51402013);; 中国博士后科学基金特别资助项目(2015T80037);中国博士后科学基金(一等)(2014M550022);; 中央高校基本科研业务费(FRF-TP-15-052A2);; 专用集成电路重点实验室基金
作者(Author): 刘金龙,李成明,陈良贤,刘青,王晶晶,冯志红
DOI: 10.13289/j.issn.1009-6264.2016.07.025
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