第一性原理分析Al/Al4SiC4界面的稳定性与电子结构Stability and electronic structure of Al/Al4SiC4 interface analyzed by first-principles
李岩,马志鹏,郝辉南,朱永坤
摘要(Abstract):
针对选区激光熔化制备SiC/Al基复合材料中形成的Al/Al_4SiC_4界面,采用第一性原理计算方法,建立了12种Al/Al_4SiC_4界面结构模型,研究了Al/Al_4SiC_4界面结构的粘附功与电子性质。结果表明,几何优化后,C(Al)终端和Al终端界面润湿性较好。其中,Al终端心位界面的粘附功为7.32 J/m~2,界面间距为0.227 nm,说明此结构具有强界面特征。这意味着Al/Al_4SiC_4界面更倾向于形成Al终端心位界面结构。在Al终端心位和孔位界面结构中,界面两侧键合方式主要为金属键和离子键。而在C(Al)终端心位和孔位界面结构中,界面两侧键合方式主要为共价键和离子键。
关键词(KeyWords): Al/Al_4SiC_4界面;电子结构;第一性原理;界面性质
基金项目(Foundation): 国家自然科学基金(51674090)
作者(Author): 李岩,马志鹏,郝辉南,朱永坤
DOI: 10.13289/j.issn.1009-6264.2023-0564
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