退火温度对真空热蒸发CdTe薄膜特性的影响Influence of annealing temperature on properties of vacuum thermal evaporation CdTe thin films
刘绰,张雷,马蕾,彭英才
摘要(Abstract):
采用真空热蒸发方法,以高纯CdTe粉末为蒸发源,在石英和AZO玻璃上沉积了厚度约为485 nm的CdTe薄膜,随后在N2氛围中于250~400℃条件下进行后退火处理。利用X射线衍射仪、拉曼光谱仪、分光光度计和数字源表测量了不同退火温度条件下样品的结构、光学和电学特性。结果表明,所制备的薄膜为立方闪锌矿结构,择优取向为<111>晶向,提高退火温度可以促进薄膜结晶;光学测量结果证实,随退火温度升高,薄膜样品的光学带隙由1.527 e V减小到1.496 e V;电流-电压测试表明,薄膜电导率随退火温度的增加,由0.97μS/cm增大至87.3μS/cm。
关键词(KeyWords): 真空热蒸发;CdTe薄膜;退火处理;结构特性
基金项目(Foundation): 河北大学校内人才培养项目
作者(Author): 刘绰,张雷,马蕾,彭英才
DOI: 10.13289/j.issn.1009-6264.2017.03.026
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