黄俊毅,范广涵,章勇

• 1:华南师范大学光电子材料与技术研究所

摘要(Abstract)：

利用电子束蒸发技术在玻璃衬底上沉积了Ta掺杂ITO(ITO∶Ta)薄膜,对比研究了在不同退火温度下ITO∶Ta和ITO薄膜表面形貌、方阻、载流子浓度、霍尔迁移率和透光率的变化情况。结果表明,随着退火温度的上升,ITO∶Ta薄膜的晶化程度不断提高,并获得较低的表面粗糙度。在合适的退火温度下,ITO∶Ta薄膜的光电性能也有显著的改善。当在氮气氧气氛围下经过500℃退火时,ITO∶Ta薄膜得到最佳的综合性能,表面均方根粗糙度为2.17 nm,方阻为10～20Ω,在440 nm的透光率可达98.5%。

关键词(KeyWords)： ITO薄膜;掺杂;电子束蒸发;退火温度

Abstract:

Keywords:

基金项目(Foundation): 粤港关键领域重点突破项目(2007A010501008);; 广东省教育部产学研结合项目(2009B09030038);; 教育部博士点基金项目(2007498351);;

作者(Author): 黄俊毅,范广涵,章勇

DOI: 10.13289/j.issn.1009-6264.2010.07.027

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