组织和温度对Cu表面氧化速率的影响Effect of microstructure and temperature on oxidation behavior of pure copper
曹军,丁雨田,卢振华,胡勇
摘要(Abstract):
利用扫描电镜、X射线衍射仪和氧化称重实验对铜表面氧化速率进行研究,分析了不同组织、晶粒和温度对铜氧化性能的影响。结果表明:铜的组织结构是影响其氧化性能的主要因素,非密排的(100)晶面上界面能高、晶面原子堆垛相对疏松和原子尺度上粗糙,且氧化膜生长连续,氧化速率高于密排的(111)晶面;温度升高,铜表面的内能增大,铜原子较易成为活化原子与氧气发生反应,同时增大了铜原子在氧化膜中的扩散速率,加速了铜的氧化;铜试样经过等径角挤压(ECAP)后,(111)晶面铜表面的面积增大,氧化速率降低,晶界不是影响铜氧化速率的主要因素,能量较小的晶面原子所占的面积增大,铜的氧化速率减小。
关键词(KeyWords): 单晶铜;多晶铜;氧化速率;等径角挤压(ECAP)
基金项目(Foundation): 甘肃省科技攻关项目(2GSO64-A52-05)
作者(Author): 曹军,丁雨田,卢振华,胡勇
DOI: 10.13289/j.issn.1009-6264.2011.12.029
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