硼掺杂对钛基金刚石薄膜附着力的影响Effect of doped boron on the adhesion of diamond film on titanium substrate
魏俊俊,贺琦,高旭辉,吕反修
摘要(Abstract):
采用微波等离子体化学气相沉积(MPCVD)技术在钛基片上沉积了掺硼金刚石薄膜,并对掺杂前后的薄膜形貌及结构进行了检测。结果表明掺杂元素对形貌和结构有很大的影响,同时掺杂后薄膜与基底附着力有所下降。掠角衍射(GIXD)检测表明,中间层的主要成分是TiC和TiH2。随着硼的加入,两者的含量增加。薄膜与基底的附着力下降的原因主要是受中间过渡层成分和残余应力增加的共同影响。
关键词(KeyWords): 金刚石薄膜;掠角衍射(GIXD);掺硼;附着力;CVD
基金项目(Foundation):
作者(Author): 魏俊俊,贺琦,高旭辉,吕反修
参考文献(References):
- [1]Fisher V,Gandini D,Laufer S,et al.Preparation and characterization of Ti/diamond electrodes[J].Electrochimica Acta,1998,44(2-3):521-524.
- [2]Xueming C,Guohua C.Anodic oxidation of orange II on Ti/BDD electrode:variable effects[J].Separation and Purification Technology,2006,48(1):45-49.
- [3]Morao A,Lopes A,Pessoa M T,et al.Degradation of mixtures of phenols using boron doped diamond electrodes for wastewater treatment[J].ElectrochimicaActa,2004,49(9-10):1587-1595.
- [4]Beck F,Kaiser W,Krohn H.Boron doped diamond(BDD)-layers on titanium substrates as electrodes in applied electrochemistry[J].Electrochimica Acta,2000,45(28):4691-4695.
- [5]Panizza M,Michaud P A,Cerisola G,et al.Electrochemical treatment of wastewaters containing organic pollutants on boron-doped diamond electrodes:prediction of specific energy consumption and required electrode area[J].Electrochemistry Communications,2001,3(7):336-339.
- [6]Troster I,Fryda M,Ferrmann D,et al.Electrochemical advanced oxidation process for water treatment using diaChem electrodes[J].Diamond and RelatedMaterials,2002,11(3-6):640-645.
- [7]Zhang R,Lee S T,Lam Y W.Characterization of heavily boron-doped diamond films[J].Diamond and Related Materials,1996,5(11):1288-1294.
- [8]Ferreira N G,Abramof E,Corat E J,et al.Stress study of HFCVD boron-doped diamond films by X-ray diffraction measurements[J].Diamond and RelatedMaterials,2001,10(3-7):750-754.
- [9]Fan Q H,Gracio J,Nasar A,et al.Comparison of the adhesion of diamond films deposited on different materials[J].Diamond and Related Materials,2001,10(3-7):797-802.
- [10]Kalish R.Doping of diamond[J].Carbon,1999,37(5):781-785.
- [11]Masahiro D,Makoto K,Takashi H.Electrical properties of boron-doped diamond films prepared by microwave plasma chemical vapour deposition[J].ThinSolid Films,1993,228(1-2):285-288.
- [12]Gerger I,Haubner R,Kronberger H,et al.Investigation of diamond coatings on titanium substrates for electrochemical applications[J].Diamond and RelatedMaterials,2004,13(4-8):1062-1069.
- [13]Frenklach M,Wang H.Detailed surface and gas-phase chemical kinetics of diamond deposition[J].Physical Review B(Condensed Matter),1991,43(2):1520-1545.
- [14]Beckmann R,Reinke S,Kuhr M,et al.Investigation of gas phase mechanisms during deposition of diamond films[J].Surface and Coatings Technology,1993,60(1-3):506-510.
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