任凤章,陈洁,赵士阳,马战红,王宇飞,田保红

• 1:河南科技大学材料科学与工程学院
• 2:河南省有色金属材料科学与加工技术重点实验室

摘要(Abstract)：

用电沉积法分别制备了具有不同调制波长的Ag/Cu和Cu/Ni金属多层膜,研究了多层膜的硬度与调制波长之间的关系。结果表明,当调制波长λ>300 nm时,两种多层膜的硬度与调制波长符合位错塞积机制的Hall-Petch关系,当λ<300 nm时,都偏离了Hall-Petch关系;Ag/Cu和Cu/Ni多层膜分别在λ=50 nm和100 nm处取得硬度峰值。基于Cheng等人的电子理论分别求出了Ag、Cu和Ni金属晶体的位错稳定的临界晶粒尺寸,进而定量地解释了Ag/Cu和Cu/Ni金属多层膜硬度峰值位置。

关键词(KeyWords)： 多层膜;Hall-Petch关系;临界晶粒尺寸;电子理论

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金资助项目(50771042);; 河南省基础与前沿技术研究计划资助项目(092300410064);; 河南省科技创新人才计划项目(104100510005);; 河南省高校科技创新人才支持计划资助项目(2009HASTIT023)

作者(Author): 任凤章,陈洁,赵士阳,马战红,王宇飞,田保红

DOI: 10.13289/j.issn.1009-6264.2010.12.002

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