刘春泉,熊芬,周锦添,张颖,林思源,李飞,周文萍

• 1:湖南工学院材料科学与工程学院
• 2:武汉科技大学省部共建耐火材料与冶金国家重点实验室

摘要(Abstract)：

采用射频(RF)磁控溅射在硅基片上连续逐层沉积制备了M/MoS_2(M=Ti、Al、Mo和Ag)纳米薄膜，随后对其在95%Ar+5%H_2混合气氛中进行了500℃的退火处理。采用原子力显微镜(AFM)、扫描电镜(SEM)、拉曼光谱(Raman)、X射线光电子能谱(XPS)和两探针等研究了退火处理及不同金属膜基底对MoS_2薄膜表面形貌、结构和金半接触电性能的影响。结果表明：所制备的纳米膜均匀且连续，界面紧密且清洁；95%Ar+5%H_2混合气氛中退火处理能强烈影响顶部MoS_2层的形貌并可有效去除MoS_2中的杂质氧，改善其结晶性、稳定性和结构完整性；拉曼光谱结果显示在4种金属基底上的MoS_2薄膜均为块状结构，其中Ag和Mo基底上的MoS_2薄膜结晶性相对较好，Ag基底上MoS_2薄膜出现了呈片层与颗粒的混合形态；对比实验数据和综合性能得出Mo作为MoS_2的组成元素，与MoS_2金半接触电阻最低更适合作为MoS_2基电子器件的电极材料。

关键词(KeyWords)： M/MoS_2薄膜;金半接触;连续逐层沉积;退火

Abstract:

Keywords:

基金项目(Foundation): 湖南省科技人才托举工程项目“小荷”科技人才专项(2023TJ-X10);; 湖南省自然科学基金项目(2023JJ50108);; 湖南省教育厅一般项目(22C0629);; 衡阳市“小荷”科技人才项目(衡市科协字[2022]68号);; 湖南工学院自科培育项目(2022HY007);; 衡阳市科技计划(202121014479);; 2023年度湖南省大学生创新创业训练计划项目(S202311528111,S202311528096X,S202311528049,S202311528056X);; 湖南省科技创新计划资助(2021RC1008)

作者(Author): 刘春泉,熊芬,周锦添,张颖,林思源,李飞,周文萍

DOI: 10.13289/j.issn.1009-6264.2023-0074

参考文献(References)：

• [1] 翟英娇，李金华，楚学影，等.纳米结构二硫化钼的制备及其应用[J].无机材料学报，2015,30(9):897-905.ZHAI Ying-jiao,LI Jin-hua,CHU Xue-ying,et al.Preparation and application of molybdenum disulfide nanostructures[J].Journal of Inorganic Materials,2015,30(9):897-905.
• [2] Zhang Y,Tang T T,Girit C,et al.Direct observation of a widely tunable bandgap in bilayer graphene[J].Nature,2009,459 (7248):820-823.
• [3] Wang H,Liu F,Fu W,et al.Two-dimensional heterostructures:Fabrication,characterization,and application[J].Nanoscale,2014,6(21):12250-12272.
• [4] Wang Q H,Kalantar-Zadeh K,Kis A,et al.Electronics and optoelectronics of two-dimensional transition metal dichalcogenides[J].Nature Nanotechnology,2012,7(11):699-712.
• [5] Niu L,Coleman J N,Zhang H,et al.Production of two-dimensional nanomaterials via liquid-based direct exfoliation[J].Small,2016,12(3):272-293.
• [6] Desai S B,Madhvapathy S R,Sachid A B,et al.MoS2 transistors with 1-nanometer gate lengths[J].Science,2016,354(6308):99-102.
• [7] 熊芬，姜思宇，吴隽，等.95%Ar+5%H2气氛退火对Ag/MoS2和Ag/BN/MoS2薄膜形貌和结构的影响[J].人工晶体学报，2019,48(12):2186-2193.XIONG Fen,JIANG Si-yu,WU Jun,et al.Effect of annealing in 95%Ar+5%H2 on the morphology and structure of Ag/MoS2 and Ag/BN/MoS2 thin films[J].Journal of Synthetic Crystals,2019,48(12):2186-2193.
• [8] Cheng R,Jiang S,Chen Y,et al.Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics[J].Nature Communications,2014,5:5143-5149.
• [9] Ayari A,Cobas E,Ogundadegbe O,et al.Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides[J].Journal of Applied Physics,2007,101(1):014507.
• [10] Xiong F,Jiang S,Wu J,et al.Successive layer-by-layer deposition of metal (Mo,Ag)/BN/MoS2 nanolaminate films and the electric properties of BN/MoS2 heterostructure on different metal substrates[J].Journal of Materials Science:Materials in Electronics,2020,31(12):9559-9567.
• [11] 郭才胜，吴隽，牛犇，等.英寸级少层MoS2薄膜的低温可控制备[J].材料导报，2021,35(12):12039-12043.GUO Cai-sheng,WU Jun,NIU Ben,et al.Controllable preparation of inch-size MoS2 few-layer thin films at low temperature[J].Materials Reports,2021,35(12):12039-12043.
• [12] Bao W,Cai X,Kim D,et al.High mobility ambipolar MoS2 field-effect transistors:substrate and dielectric effects[J].Applied Physics Letters,2012,102(4):0421041.
• [13] Kang J,Liu W,Banerjee K.High-performance MoS2 transistors with low-resistance molybdenum contacts[J].Applied Physics Letters,2014,104(9):093106.
• [14] Kim S,Konar A,Hwang W S,et al.High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals[J].Nature Communications,2012,3(8):1011.
• [15] Liu H,Neal A T,Ye P D.Channel length scaling of MoS2 MOSFETs[J].ACS Nano,2012,6(10):8563-8569.
• [16] Wang B B,Zhu K,Feng J,et al.Low-pressure thermal chemical vapour deposition of molybdenum oxide nanorods[J].Journal of Alloys & Compounds,2016,661:66-71.
• [17] Tao J,Chai J,Lu X,et al.Growth of wafer-scale MoS2 monolayer by magnetron sputtering[J].Nanoscale,2015,7(6):2497-2503.
• [18] Wong W C,Ng S M,Wong H F,et al.Effect of post-annealing on sputtered MoS2 films[J].Solid-State Electronics,2017,138:62-65.
• [19] Li H,Zhang Q,Yap C C R,et al.From bulk to monolayer MoS2:evolution of raman scattering[J].Advanced Functional Materials,2012,22(7):1385-1390.
• [20] Kappera R,Voiry D,Yalcin S E,et al.Phase-engineered low-resistance contacts for ultrathin MoS2 transistors[J].Nature Materials,2014,13(12):1128-1134.
• [21] Wang L,Jie J,Shao Z,et al.MoS2/Si Heterojunction with vertically standing layered structure for ultrafast,high-detectivity,self-driven visible-near infrared photodetectors[J].Advanced Functional Materials,2015,25(19):2910-2919.
• [22] Shimizu J,Ohashi T,Matsuura K,et al.High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs[J].Japanese Journal of Applied Physics,2017,56(4S):04CP06-5.
• [23] Ullah F,Senthilkumar V,Kim S H,et al.Continuous large area few layers MoS2 films by pulsed laser deposition and effect of annealing in sulfur environment[J].Journal of Nanoscience & Nanotechnology,2016,16(10):10284-10289.
• [24] Cui Y Q,Xi S,Tang J L,et al.Research on the preparation and characterization of two-dimension materials[J].China Molybdenum Industry,2017,41(2):31-35.
• [25] Eda G,Yamaguchi H,Voiry D,et al.Photoluminescence from chemically exfoliated MoS2[J].Nano Letters,2012,12(12):5111-5116.
• [26] Py M A,Haering R R.Structural destabilization induced by lithium intercalation in MoS2 and related compounds[J].Canadian Journal of Physics,1983,61(1):76-84.
• [27] Rhoderick E H.Metal-semiconductor contacts[J].IEE Proceedings I-Solid-State and Electron Devices,1982,129(1):1-14.
• [28] Michaelson H B.The work function of the elements and its periodicity[J].Journal of Applied Physics,1977,48(11):4729-4733.
• [29] Das S,Chen H Y,Penumatcha A V,et al.High performance multilayer MoS2 transistors with scandium contacts[J].Nano Letters,2013,13(1):100-105.

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