张志坤,占勤,窦志昂,白敬元,杨洪广

• 1:中国原子能科学研究院

摘要(Abstract)：

采用等离子增强化学气相沉积方法在p型<100>硅片沉积氮化硅薄膜，通过椭偏仪和缓冲氧化物刻蚀液(BOE)溶解实验来表征薄膜的均匀性与致密度，研究了射频功率、腔室气压、气体流量比和衬底温度4个工艺参数对氮化硅薄膜性能的影响。结果表明：在60～100 W范围内，射频功率越大，氮化硅薄膜生长速率越快；腔室气压在130 Pa时有利于形成均匀性好、结构致密的氮化硅薄膜。硅烷/氨气气体流量比例较低时，提高流量比可以提高薄膜的致密度，但比例超过1.4后致密度几乎不再变化；衬底温度在200～300℃时，衬底温度越高，薄膜的生长速率越低，致密度越高。最优的工艺参数为：射频功率100 W、腔室气压130 Pa、硅烷流量280 mL/min、氨气流量10 mL/min、衬底温度300℃,此时氮化硅薄膜的生长速率为16.3 nm/min,均匀性为0.07%,折射率为2.1,溶解速率为0.42 nm/s。

关键词(KeyWords)： 等离子增强化学气相沉积;氮化硅;致密度;均匀性

Abstract:

Keywords:

基金项目(Foundation): 中核集团英才基金(219601)

作者(Author): 张志坤,占勤,窦志昂,白敬元,杨洪广

DOI: 10.13289/j.issn.1009-6264.2023-0183

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