微波烧结制备碳化硅晶须的影响因素Preparation of SiC whisker by microwave sintering
郝斌,刘剑,刘进强,王福
摘要(Abstract):
将干燥后的硅溶胶-活性炭作为反应物,在不加入任何金属催化剂的情况下,利用微波加热碳热还原法合成碳化硅晶须,研究反应温度和时间及坩埚部位对产物的影响。结果表明:30 min时,温度由1300℃升高到1600℃,产物中物相β-SiC越来越多;1500℃条件下,合成产物在坩埚的上部和中部主要分别为分散的SiC晶须和团聚在一起的SiC晶须;坩埚底部的产物主要为表面光滑的SiO2颗粒。1600℃条件下,合成产物在坩埚的上部和中部主要分别为分散的SiC晶须和等轴状β-SiC颗粒,底部为晶须和颗粒的混合物。1500℃×30 min得到的SiC晶须产率和直晶率优于1600℃×30 min得到的SiC晶须产率和直晶率。
关键词(KeyWords): 微波烧结;温度;碳化硅;晶须
基金项目(Foundation): 国家重点实验室开放课题项目(2011Z-05);; 唐山市科学技术研究与发展规划项目(11110210B-6-5)
作者(Author): 郝斌,刘剑,刘进强,王福
DOI: 10.13289/j.issn.1009-6264.2013.08.005
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