离子源预处理工艺对WC基底表面及Ta缓冲涂层的影响Influence of ion source pretreatment on WC substrate surface and Ta buffer coating
魏俊俊,朱小研,陈良贤,刘金龙,黑立富,李成明,张勇
摘要(Abstract):
研究了阳极层离子源预处理工艺对WC硬质合金基底表面粗糙度Ra和表面最大峰谷值Pv的影响,以及对后续镀制Ta缓冲涂层表面特征及膜基附着力的影响。结果表明,硬质合金基片表面粗糙度和表面最大峰谷值的增加量随基片偏压升高呈指数增加;而离子源电压对基片表面粗糙度和表面最大峰谷值影响较弱;采用离子源电压1350 V,基片偏压200 V轰击硬质合金基片15 min后镀制Ta膜,膜层表面晶粒细小均匀,表面致密性显著增加;此外,基片表面经离子源处理后,镀制的Ta缓冲层与基底的膜基结合力有较大改善,这将有利于提高后续贵金属保护涂层的附着力及抗元素扩散能力。
关键词(KeyWords): 离子源预处理;结合力;表面粗糙度;表面最大峰谷值
基金项目(Foundation): 国家自然科学基金(51272024);; 中央高校基本科研业务费(FRF-TP-14-094A2)
作者(Author): 魏俊俊,朱小研,陈良贤,刘金龙,黑立富,李成明,张勇
DOI: 10.13289/j.issn.1009-6264.2015.06.032
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