掺杂TiO2对ZnO压敏陶瓷电学性能的影响Effects of TiO2 addition on electrical properties of ZnO varistor ceramics
于晓华,荣菊,詹肇麟,王远
摘要(Abstract)：
以ZnO粉末为主要原料,以TiO2、Bi2O3、MnO2、Co2O3、Sb2O3为组元,在常规电子陶瓷生产工艺下制备低压化ZnO压敏陶瓷。将掺杂TiO2的陶瓷片与未掺杂TiO2的陶瓷片进行对比分析,确定最佳掺杂量。采用能谱仪分析瓷片的微区成分,采用SEM观察瓷片断口形貌,利用压敏电阻直流参数仪测量瓷片的电学性能。研究结果表明,瓷片内部主要存在富Bi晶界、Bi贫化晶界和晶粒直接接触晶界;TiO2对ZnO晶粒有助长作用,不掺杂纳米TiO2陶瓷是11.4μm,掺杂纳米TiO2高达30.5μm;当TiO2掺杂量为1.5%mol时瓷片电学性能较优,即压敏电压为31.2 V/mm、漏电流为0.028 m A及为非线性系数为20.1。
关键词(KeyWords)： ZnO压敏陶瓷;TiO2掺杂;压敏电压;非线性系数;漏电流
基金项目(Foundation): 国家自然科学基金(51165016,51301144)
作者(Author): 于晓华,荣菊,詹肇麟,王远
DOI: 10.13289/j.issn.1009-6264.2015.03.006
参考文献(References)：
- [1]Nahm C W.Microstructure and electrical properties of Zn O-V2O5-Mn O2-Co3O4-Dy2O3-Nb2O5-based varistors[J].J Alloy Compd,2010,490(1):52-54.
- [2]Selim F A,Gupta T K,Hower P L.Low-voltage Zn O varistor:device process and defect model[J].J Appl Phys,1980,51(1):765-768.
- [3]Slavko B.Influence of Bi2O3/Ti O2,Sb2O3and Cr2O3doping on low-voltage varistor ceramics[J].J Eur Ceram Soc,1999,19:709-713.
- [4]Matsuoka M.Nonohmic properties of Zinc oxide ceramics[J].Jpn J Appl Phys,1971,10(6):736-746.
- [5]Yan M F,Rhodes W W.Grain Boundaries in Semiconductors[M].New York Elsevier,1982:357-362.
- [6]Karat D K,Sailar S R,Sate S K,et al.Zinc oxide varistors synthesis,eharacterization and applieations[J].J Sci Res,1991,50(8):569-605.
- [7]Hozer L.Metal-Oxide Varistor Semiconductor Ceramics:Grain Boundary Effects[M].Poland:Polish Scientific Publishers,1994:44-109.
- [8]Souza F L,Gomes J W,Bueno P R,et al.Effect of addition of Zn O seeds on the electrical properties of Zn O-based varistors[J].Mater Chem Phys,2003,80:512-516.
- [9]Kim E D,Kim C H.Role and effect of Co2O3additive on the upturn characteristics of Zn O varistors[J].J Appl Phys,1985,58(8):3231-3235.
- [10]Asokan T,Zyengar G N K,Nagabhushana G R.Non-ohmic behavior of the binary of Zn O-Nb2O5system[J].J Mater Sci,1987,22(3):1019-1023.
- [11]Zhu J F,Luo H,Wang F,et al.Sintering process for Pr6O11doped Zn O varistors[J].Journal of Shan Xi University of Science,2004,22(5):381-386.
- [12]Henning D F K,Hartung R,Reijnen P J L.The grain size control in low-voltage varistors[J].Jam Ceram Soc,1990,73(3):645
- [13]Selim F A,Gupta T K,Hower P L.Low-voltage Zn O varistor:device process and defect model[J].J Appl Phys,1980,51(1):765-768.
- [14]Elfwing M,Olsson E.Differences in wetting characteristics of Bi2O3polymorphs in Zn O varistor materials[J].J Am Ceram Soc,2000,83(9):2311-2314.
文章评论(Comment)：
|
||||||||||||||||||
|
||||||||||||||||||