热处理和冷却速率对直拉单晶硅少子寿命的影响Effect of heat treatment and cooling rate on minority carrier lifetime of Czochralski silicon
周潘兵,柯航,周浪
摘要(Abstract):
研究了加热温度与冷却速率对热处理直拉单晶硅少子寿命和间隙铁含量的影响。结果表明,直拉单晶硅在300~1050℃加热40 min,以50℃/s的速率快冷至室温会提高硅片的间隙铁含量,降低硅片的少子寿命;加热温度越高,快冷后硅片的间隙铁含量越高,少子寿命越低;直拉单晶硅片在900~1050℃加热,当以50℃/s的速率快冷至室温,90%以上的铁以沉淀形式存在,其余的铁以间隙态存在。直拉单晶硅片分别经800、900和1000℃加热40 min后在0.017~50℃/s的速率范围冷却,硅片间隙铁含量随冷却速率增加而增加,少子寿命随冷却速率增加而降低,加热温度越高,间隙铁含量上升的幅度越大,而少子寿命下降的幅度越大。
关键词(KeyWords): 直拉单晶硅;冷却速率;少子寿命
基金项目(Foundation):
作者(Author): 周潘兵,柯航,周浪
DOI: 10.13289/j.issn.1009-6264.2012.08.001
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