Micro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wall CVDMicro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wall CVD
PEZZOTTI Giuseppe
摘要(Abstract)：
关键词(KeyWords)：
基金项目(Foundation):
作者(Author): PEZZOTTI Giuseppe
参考文献(References)：
- 1.S.Nishino,J.Powell,H.A.Will,Appl.Phys.Lett.,1983,42:460.
- 2.D.K.Ferry,Phys.Rev.B,1975,12:2361.
- 3.T.Nishiguchi,Y.Mukai,S.Ohshima and S.Nishino,Phys.Stat.Sol.(c),2003,7:2585.
- 4.Y.Kobayashi,M.Nakamura,and T.Suzuki,Appl.Phys.Lett.,1982,40:1041.
- 5.T.Nishiguchi,M.Nakamura,K.Nishio,T.Isshiki,and S.Nishino,Appl.Phys.Lett.,2004,84:19.
- 6.H.Mukaida,H.Okumura,J.Lee,H.Daimon,E.Sakuma,S.Misawa,K.Endo and S.Yoshida,J.Appl.Phys.,1987,62:254.
- 7.D.Olego and M.Cardona,Phys.Rev.B,1982,2:2255.
- 8.C.Lee,G Pezzotti,Y.Okui and S.Nishino,Appl.Surf.Sci.,2004,228:10.
文章评论(Comment)：
|
||||||||||||||||||
|
||||||||||||||||||