华中,孟祥成,孙亚明,于万秋,龙东,张守琪

• 1:吉林师范大学功能材料物理与化学教育部重点实验室

摘要(Abstract)：

利用磁控溅射法将Cu/Sn/Zn S前驱体沉积在钙钠玻璃基片上,再通过硫化该前驱体制备Cu2ZnSnS4薄膜。利用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、能谱仪、霍尔效应测量系统和紫外可见分光光度计研究了Cu2ZnSnS4薄膜的微观结构、表面形貌、化学成分、电学和光学性能。结果表明,CZTS薄膜的微观结构依赖于硫化温度和时间。在480℃硫化3 h的薄膜为沿(112)晶面择优取向生长的纯相CZTS薄膜,该薄膜的禁带宽度是1.51 e V,其电阻率和载流子浓度分别为0.39Ω·cm和4.07×1017cm-3。

关键词(KeyWords)： Cu2ZnSnS4;磁控溅射;硫化;薄膜

Abstract:

Keywords:

基金项目(Foundation): 吉林师范大学研究生创新研究计划(2013005)

作者(Author): 华中,孟祥成,孙亚明,于万秋,龙东,张守琪

DOI: 10.13289/j.issn.1009-6264.2015.06.039

参考文献(References)：

• [1]Ito K,Nakazawa T.Electrical and optical properties of stannite-type quaternary semiconductor thin films[J].Japanese Journal of Applied Physics,1988,27(11):2094-2097.
• [2]Shin B,Gunawan O,Zhu Y,et al.Thin film solar cell with 8.4%power conversion efficiency using an earth-abundant Cu2Zn Sn S4absorber[J].Progress in Photovoltaics:Research and Applications,2013,21(1):72-76.
• [3]Shockley W,Queisser H J.Detailed balance limit of efficiency of p-n junction solar cells[J].Journal of Applied Physics,1961,32(3):510-519.
• [4]Tanaka T,Yoshida A,Saiki D,et al.Influence of composition ratio on properties of Cu2Zn Sn S4thin films fabricated by co-evaporation[J].Thin Solid Films,2010,518(21):S29-S33.
• [5]Ahmed S,Reuter K B,Gunawan O,et al.A high efficiency electrodeposited Cu2Zn Sn S4solar cell[J].Advanced Energy Materials,2012,2(2):253-259.
• [6]Kamoun N,Bouzouita H,Rezig B.Fabrication and characterization of Cu2Zn Sn S4thin films deposited by spray pyrolysis technique[J].Thin Solid Films,2007,515(15):5949-5952.
• [7]Kumar Y B K,Babu G S,Bhaskar P U,et al.Effect of starting-solution p H on the growth of Cu2Zn Sn S4thin films deposited by spray pyrolysis[J].Physica Status Solidi,2009,206(7):1525-1530.
• [8]Wibowo R A,Lee E S,Munir B et al.Pulsed laser deposition of quaternary Cu2Zn Sn Se4thin films[J].Physica Status Solidi,2007,204(10):3373-3379.
• [9]Moholkar A V,Shinde S S,Agawane G L,et al.Studies of compositional dependent CZTS thin film solar cells by pulsed laser deposition technique:An attempt to improve the efficiency[J].Journal of Alloys and Compounds,2012,544:145-151.
• [10]Yeh M Y,Lee C C,Wuu D S.Influences of synthesizing temperatures on the properties of Cu2Zn Sn S4prepared by sol-gel spin-coated deposition[J].Journal of Sol-Gel Science and Technology,2009,52(1):65-68.
• [11]Seol J S,Lee S Y,Lee J C,et al.Electrical and optical properties of Cu2Zn Sn S4thin films prepared by rf magnetron sputtering process[J].Solar Energy Materials and Solar Cells,2003,75(1/2):155-162.
• [12]Fernandes P A,SaloméP M P,da Cunha A F,et al.Cu2Zn Sn S4solar cells prepared with sulphurized dc-sputtered stacked metallic precursors[J].Thin Solid Films,2011,519(21):7382-7385.
• [13]蒋百灵,杨巍,苏阳.微弧氧化与磁控溅射的工程应用[J].金属热处理,2008,33(1):86-90.JIANG Bai-ling,YANG Wei,SU Yang.Engineering applications of microarc oxidation and magnetron sputtering[J].Heat Treatment of Metals,2008,33(1):86-90.
• [14]Katagiri H,Jimbo K,Maw W S,et al.Development of CZTS based thin film solar cells[J].Thin Solid Films,2009,517(7):2455-2460.
• [15]Scragg J J,Dale P J,Peter L M.Synthesis and characterization of Cu2Zn Sn S4absorber layers by an electrodeposition-annealing route[J].Thin Solid Films,2009,517(7):2481-2484.
• [16]SHI L,PEI C,XU Y,et al.Template-directed synthesis of ordered single-crystalline nanowires arrays of Cu2Zn Sn S4and Cu2Zn Sn Se4[J].J Am Chem Soc,2011,133(27):10328-10331.

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