江民红,刘心宇

• 1:桂林电子科技大学广西信息材料重点实验室
• 2:中南大学材料科学与工程学院

摘要(Abstract)：

采用陶瓷烧结靶材、射频磁控溅射法制备了(002)择优取向的Al掺杂ZnO薄膜,着重研究了不同的热处理工艺对显微结构、光电性能的影响。结果表明,真空400℃退火能大幅提高ZAO薄膜的导电性能,并保持其平均透光率在85%以上,而非真空退火(大气环境)将使ZAO薄膜材料绝缘化,400℃真空退火时间或退火次数对导电性能无明显影响,但随退火时间和退火次数的增加薄膜组织恶化,在真空循环退火条件下尤为严重;经400℃真空退火的薄膜样品,其最低电阻率达8.4×10-4Ω.cm。

关键词(KeyWords)： ZAO薄膜;真空退火;导电性能;组织

Abstract:

Keywords:

基金项目(Foundation): 广西“电子信息材料与器件”科技创新人才基金

作者(Author): 江民红,刘心宇

参考文献(References)：

• [1]裴志亮,张小波,王铁钢,等.ZnO:Al(ZAO)薄膜的制备与特性研究[J].金属学报,2005,41(1):84-88.PEI Zhi-liang,ZHANG Xiao-bo,WANG Tie-gang,et al.Preparation and properties of ZnO:Al(ZAO)thin films deposited by DC reactive magnetronsputtering[J].Acta Metallurgica Sinica,2005,41(1):84-88.
• [2]Fortunato E,Barquinha P,Pimentel A,et al.Recent advancesin ZnOtransparent thinfilmtransistors[J].Thin Solid Films,2005,487(1-2):205-211.
• [3]傅竹西,林碧霞.氧化锌薄膜光电功能材料研究的关键问题[J].发光学报,2004,25(2):117-122.FUZhu-xi,LINBi-xia.Important problems of studying photo-electronic ZnOfilms[J].Chinese Journal of Luminescence,2004,25(2):117-122.
• [4]SHAO Wei,MARui-xin,LIUBin.Fabrication and properties of ZAOpowder,sputteringtarget materials andthe relatedfilms[J].Journal of University ofScience and Technology Beijing,2006,13(4):346-349.
• [5]CHEN M,PEI Z L,SUNC,et al.ZAO:an attractive potential substitute for ITOinflat display panels[J].Materials Science and Engineering B,2001,85(2-3):212-217.
• [6]庄惠照,何建廷,薛成山,等.衬底温度对PLD方法生长Si(111)基ZnO薄膜结晶质量和发光特性的影响[J].稀有金属材料与工程,2006,35(7):1105-1108.ZHUANG Hui-zhao,HEJiang-ting,XUE Cheng-shan,et al.Effects of substrate temperatures onthe quality and optical properties of ZnOthinfilms grownon silicon(111)by PLD[J].Rare Metal Materials and Engineering,2006,35(7):1105-1108.
• [7]马瑾,余旭浒,计峰,等.真空退火对溅射淀积ZnO:Ga透明导电膜性能的影响[J].稀有金属材料与工程,2005,34(7):1166-1168.MAJin,YUXu-hu,JI Feng,et al.Influence of vacuumannealing on properties of ZnO:Ga films prepared by r.f.magnetron sputtering[J].Rare MetalMaterials and Engineering,2005,34(7):1166-1168.
• [8]吕,汪冬梅,陈长奇,等.退火处理对不同RF功率下制备ZnO薄膜的结晶性能的影响[J].材料热处理学报,2006,27(3):26-31.LVJun,WANG Dong-mei,CHENChang-qi,et al.Influence of annealing on crystallinity of ZnOthin films prepared by radio frequency(RF)magnetronsputtering under different sputtering powers[J].Transactions of Materials and Heat Treatment,2006,27(3):26-31.
• [9]汪冬梅,吕,徐光青,等.纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响[J].材料热处理学报,2007,28(4):46-50.WANG Dong-mei,LVJun,XUGuang-qing,et al.Influence of annealingin argon on properties of Al-doped zinc oxide films[J].Transactions of Materialsand Heat Treatment,2007,28(4):46-50.
• [10]FANG Guo-jia,LI De-jie,YAO Bao-lun.Influence of post-deposition annealing on the properties of transparent conductive nanocrystalline ZAOthin filmsprepared by RF magnetron sputtering with highly conductive ceramic target[J].Thin Solid Films,2002,418(2):156-162.
• [11]KUOS Y,CHEN WC,LAI FI,et al.Effects of doping concentration and annealingtemperature on properties of highly-oriented Al-doped ZnOfilms[J].Journal of Crystal Growth,2006,287(1):78-84.
• [12]CHANGJ F,Hon MH.The effect of depositiontemperature onthe properties of Al-doped zinc oxide thinfilms[J].Thin Solid Films,2001,386(1):79-86.
• [13]KimK H,Park K C,MA D Y.Structural,electrical and optical properties of aluminumdoped zinc oxide films prepared by radio frequency magnetronsputtering[J].Journal of Applied Physics,1997,81(12):7764-7772.

文章评论(Comment)：