孟瑜,宋忠孝,畅庚榕,刘明霞,成桢,徐可为

• 1:西安文理学院陕西省表面工程与再制造重点实验室
• 2:西安交通大学金属材料强度国家重点实验室

摘要(Abstract)：

利用直流磁控溅射技术在Si(100)基底上制备了不同偏压的Zr-B-O和Cu/Zr-B-O薄膜体系,采用扫描电镜(SEM)、X射线衍射(XRD)和透射电镜(TEM)等对薄膜样品的微观组织形貌和热稳定性进行表征分析。结果表明:不同偏压得到的Zr-B-O薄膜均为非晶结构,薄膜表面平整,膜厚均匀,膜基结合良好,薄膜方阻随偏压增加而减小;当退火温度低于750℃时,Cu膜表面完整连续,方阻较小,750℃退火后,由于Cu膜严重聚集并出现孔洞导致薄膜不连续而使电阻增加,但未发生Cu与Si的扩散,说明非晶Zr-B-O薄膜仍可以有效阻挡扩散。

关键词(KeyWords)： Zr-B-O薄膜;直流溅射;偏压;微观结构;热稳定性

Abstract:

Keywords:

基金项目(Foundation): 陕西省自然科学基金(2020JQ-889,2018JQ5173,2021JM-512);; 陕西省教育厅科技项目(19JS056,21JS036);; 西安市科技计划项目(2019KJWL24)

作者(Author): 孟瑜,宋忠孝,畅庚榕,刘明霞,成桢,徐可为

DOI: 10.13289/j.issn.1009-6264.2021-0392

参考文献(References)：

• [1] Kim J B,Nandi D K,Kim T H,et al.Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier[J].Thin Solid Films,2019,685:393-401.
• [2] Chang C S,Wang D J,Li T C,et al.Study of the electrical and diffusion barrier properties in ultra thin carbon film-coated copper microwires for interconnects[J].Journal of Materials Engineering and Performance,2019,28(4):2292-2304.
• [3] Sung P H,Chen T C.Material properties of Zr-Cu-Ni-Al thin films as diffusion barrier layer[J].Crystals,2020,10(6):540.
• [4] Kumar P,Avasthi S.Diffusion barrier with 30-fold improved performance using AlCrTaTiZrN high-entropy alloy[J].Journal of Alloys and Compounds,2020,814:151755.
• [5] Tengdelius L,Boritman E,Lu J,et al.Hard and elastic epitaxial ZrB2 thin films on Al2O3(0001) substrates deposited by magnetron sputtering from a ZrB2 compound target[J].Acta Materialia,2016,111:166-172.
• [6] 刘朋闯，刘婷婷，庞晓轩，等.Si和UO2芯块表面ZrB2薄膜的制备和表征[J].稀有金属材料与工程，2015,44(3):723-726.LIU Peng-chuang,LIU Ting-ting,PANG Xiao-xuan,et al.Preparation and characterization of ZrB2 thin films deposited on Si and UO2 fuel element[J].Rare Metal Materials and Engineering,2015,44(3):723-726.
• [7] Tengdelius L,Greczynski G,Chubarov M,et al.Stoichiometric,epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target:Effects of deposition temperature and sputtering power[J].Journal of Crystal Growth,2015,430:55-62.
• [8] 吴立国，王铁钢，郭玉垚，等.氮气流量对直流磁控溅射Zr-B-O-N薄膜摩擦学行为的影响[J].真空科学与技术学报，2018,38(10):894-900.WU Li-guo,WANG Tie-gang,GUO Yu-yao,et al.Influence of nitrogen flow-rate on tribological behavior of magnetron sputtered Zr-B-O-N coatings[J].Chinese Journal of Vacuum Science and Technology,2018,38(10):894-900.
• [9] Takeyama M B,Noya A,Nakadai Y,et al.Low temperature deposited Zr-B film applicable to extremely thin barrier for copper interconnect[J].Applied Surface Science,2009,256(4):1222-1226.
• [10] Meng Y,Song Z X,Li Y H,et al.Thermal stability of ultra thin Zr-B-N films as diffusion barrier between Cu and Si[J].Applied Surface Science,2020,527:146810.
• [11] Meng Y,Song Z X,Chen J H,et al.Ultrathin ZrBxOy films as diffusion barriers in Cu interconnects[J].Vacuum,2015,119:1-6.
• [12] Bleis A,Mitterer C,Ebner R.Optical properties and corrosion behaviour of sputtered Zr-B and Zr-B-N coatings[J].Surface and Coatings Technology,1993,60(1/3):571-576.
• [13] Meng Y,Song Z X,Qian D,et al.Thermal stability of RuZr alloy thin films as the diffusion barrier in Cu metallization[J].Journal of Alloys and Compounds,2014,588:461-464.
• [14] 李俊杰，王欣，卞海蛟，等.磁控溅射CNx薄膜的附着力、粗糙度与衬底偏压的关系[J].发光学报，2003,4(3):305-308.LI Jun-jie,WANG Xin,BIAN Hai-jiao,et al.Relations of substrate bias and adhesion,roughness of carbon nitride films synthesized by magnetron sputtering[J].Chinese Journal of Luminescence,2003,4(3):305-308.
• [15] 付学成，王英，沈赟靓，等.负偏压功率对溅射沉积钛、铜薄膜电阻的影响[J].真空科学与技术学报，2018,38(11):980-984.FU Xue-cheng,WANG Ying,SHEN Yun-liang,et al.Influence of bias power on sheet resistance of Ti and Cu thin films deposited by magnetron sputtering[J].Chinese Journal of Vacuum Science and Technology,2018,38(11):980-984.
• [16] Li R,Chen T,Jiang C,et al.Applications of high diffusion resistance multi-component AlCrTaTiZrRu/(AlCrTaTiZrRu) N0.7 film in Cu Interconnects[J].Advanced Engineering Materials,2020,22(11):2000557.
• [17] Movchan B A,Demchishin A V,Structure and properties of thick condensates of nickel,titanium,tungsten,aluminum oxides and zirconium dioxide in vacuum[J].Physics of Metals and Metallography,1969,28:653-660.
• [18] Ding M H,Zheng H,Wang L.A study of Ta-Si-N/Ti bilayer diffusion barrier for copper/silicon contact systems[J].Materials and Manufacturing Processes,2015,31(8):1009-1013.
• [19] Dai X H,Zhang L,Feng Z D,et al.Barrier performance of ultra thin amorphous Nb-Ni film between copper and silicon[J].Materials Letters,2015,159:94-97.

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