刘春泉,熊芬,马佳仪,周锦添,蒋玉琳,贺紫怡,陈敏纳,张颖

• 1:湖南工学院材料科学与工程学院
• 2:湖南工学院计算机科学与工程学院

摘要(Abstract)：

以过渡金属硫化物、氮化硼等二维层状材料为基础，研究了一种简单可靠的集成电路制造方法。在这项工作中，采用射频磁控溅射在室温下逐层制备了M/BN/MoS_2(M=Al、Ti、Mo和Ag)纳米薄膜，其中BN/MoS_2为未发生化学反应的异质结构，然后在500℃进行退火。结果表明：所制备的金属(Al、 Ti、 Mo和Ag)、BN和MoS_2薄膜均匀连续，特别是BN/MoS_2异质结构界面清晰、结合紧密。退火后，顶层MoS_2薄膜颗粒大小、粗糙度和结晶性显著提高，且杂质减少甚至消失，其中Ag/BN膜基底上MoS_2薄膜结晶性最好，且出现了较大的片层状形态。电性能测试显示金属/BN和BN/MoS_2异质结构界面的肖特基势垒使得样品的I-V特性曲线呈明显的非线性。Ti基由于退火后氧化，电阻率最大，Mo基功函数最大，电阻率其次，Ag基功函数相对较低所以电阻率较低，而Al则由于低的功函数、结构匹配及载流子浓度等因素导致其电阻率最低。

关键词(KeyWords)： BN/MoS_2异质结构;金半接触;连续逐层沉积;退火;射频磁控溅射

Abstract:

Keywords:

基金项目(Foundation): 湖南省科技人才托举工程项目“小荷”科技人才专项(2023TJ-X10);; 湖南省自然科学基金项目(2023JJ50108);; 湖南省创新型省份建设专项科普专题项目(2023ZK4316);; 湖南省应用特色学科材料科学与工程学科(湘教通[2022]351号);; 湖南工学院自科培育项目(2022HY007);; 2023年度大学生创新创业训练计划项目(国家级：S202311528049、S202311528056X;省级：S202311528111、S202311528096X)

作者(Author): 刘春泉,熊芬,马佳仪,周锦添,蒋玉琳,贺紫怡,陈敏纳,张颖

DOI: 10.13289/j.issn.1009-6264.2023-0357

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