传热过程对多晶硅真空定向凝固过程的凝固界面及热应力的影响Effects of heat exchange condition on growth interface and thermal stress of polysilicon in vacuum directional solidification process
吕国强,杨玺,刘成,马文会,陈道通,蒋鹏仪
摘要(Abstract):
以实验室10 t/a VODS型多晶炉为原型,对其凝固过程的热场、固液界面和热应力进行了瞬态模拟与实验验证。结果表明:在坩埚底部有水冷热交换块的真空定向凝固系统中硅料凝固会产生较大的热应力,增加环形保温结构使热区封闭后可改变炉内换热过程,从而改变硅料凝固情况;硅料在坩埚底部为石墨热交换块的系统中凝固时产生的热应力相对较小,但固液界面的形状会发生较大的改变,影响晶粒的生长。炉膛内径适当变宽有利于炉内热区温度分布更合理,使得硅料凝固时的固液界面更加理想。通过实验验证了多晶硅在坩埚底部无需进行水冷换热情况下进行真空定向凝固能达到冶金法生产太阳能级多晶硅的要求,这为提高冶金法制备太阳能级多晶硅质量、降低系统能耗具有一定的指导意义。
关键词(KeyWords): 多晶硅;真空定向凝固;数值模拟;固液界面;少子寿命
基金项目(Foundation): 国家自然科学基金(51466005,U1137601)
作者(Author): 吕国强,杨玺,刘成,马文会,陈道通,蒋鹏仪
DOI: 10.13289/j.issn.1009-6264.20150505.001
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