胡轶嵩,王俭秋,柯伟,韩恩厚

• 1:中国科学院金属研究所金属腐蚀与防护国家重点实验室

摘要(Abstract)：

利用静态高压釜,在330℃的10%NaOH+10 g/L PbO腐蚀介质中,对690TT合金进行5～60 d的浸泡实验,结果表明:690TT合金氧化膜由NiO、NiFe2 O4和NiCr2 O4构成。合金的氧化膜分层,靠近基体的腐蚀产物为混杂的富Cr和富Ni氧化物,是沿晶腐蚀和表面均匀腐蚀综合作用所致。中间层主要以NiCr2O4为主,外层是NiFe2O4以及NiO。氧化膜同时具有n型和p型半导体特征,内层富Cr的氧化物为p型半导体,而外层富Fe的氧化物为n型半导体。

关键词(KeyWords)： 690TT合金;氧化膜;半导体;沿晶腐蚀

Abstract:

Keywords:

基金项目(Foundation): 国家“973”项目(G2006CB605002)

作者(Author): 胡轶嵩,王俭秋,柯伟,韩恩厚

DOI: 10.13289/j.issn.1009-6264.2011.04.026

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