SiO2/Si衬底上热化学气相沉积法直接生长石墨烯Direct growth of graphene on SiO2/Si substrates by thermal CVD
陈彩云,于晓华,戴丹,江南,詹肇麟,刘忠,刘建雄
摘要(Abstract):
采用化学气相沉积法,以Si O2/Si为衬底、镍膜为催化层,研究不同催化层厚度对石墨烯生长的影响。选择拉曼光谱,透射电子显微镜等手段对石墨烯的层数和质量进行表征。结果表明,随着Ni膜厚度的增加,石墨烯的缺陷减小,而且层数也减少,当Ni膜厚度为300 nm时,可以在Si O2/Si基板上获得高质量的单层石墨烯。
关键词(KeyWords): 石墨烯;SiO2/Si;镍膜;热化学气相沉积
基金项目(Foundation): 国家自然科学基金(51165016)
作者(Author): 陈彩云,于晓华,戴丹,江南,詹肇麟,刘忠,刘建雄
DOI: 10.13289/j.issn.1009-6264.2016.01.037
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