阎有花,刘迎春,方玲,赵海花,朱景森,李德仁,卢志超,周少雄

• 1:钢铁研究总院安泰科技股份有限公司

摘要(Abstract)：

采用电沉积-硫化法制备了CuInS2薄膜,考察了硫源温度对CuInS2薄膜微结构的影响,并分析了硫化过程中的反应动力学。采用扫描电子显微镜(SEM)和能谱仪(EDS)观察并分析了薄膜的表面形貌和组分,采用X射线衍射仪(XRD)表征了薄膜的组织结构。结果表明,硫化过程的生长动力学不同于硒化过程,CuInS2薄膜的生长遵循扩散机制,当硫源温度在300~340℃之间,均可制得单一黄铜矿相结构且沿(112)面择优取向生长的CuInS2薄膜,且硫源温度为340℃制备的CuInS2薄膜均匀、致密,晶粒尺寸约为1μm,适合于制备CIS薄膜太阳能电池吸收层。

关键词(KeyWords)： Cu-In预制膜;CuInS2薄膜;硫源温度

Abstract:

Keywords:

基金项目(Foundation): 国家“十一五”高技术研究开发计划(863计划)资助项目(2006AA03Z237)

作者(Author): 阎有花,刘迎春,方玲,赵海花,朱景森,李德仁,卢志超,周少雄

参考文献(References)：

• [1]M ller J,Fischer C H,Siebentritt S,et al.2nd World conference and exhibition on photovoltaic solar energy conversion[J].Vienna,1998,2:6-10.
• [2]Gupta A,Isomura S.Precursor modification for preparation of CIS films by selenization techinique[J].Solar Energy Materials and Solar Cells,1998,53(3-4):385-401.
• [3]He Y B,Kramer T,Polity A,et al.Preparation and characterization of highly(112)——oriented CuInS2films deposited by a one-stage RF reactivesputtering process[J].Thin Solid Films,2003,431-432:231-236.
• [4]Bandyopadhyaya S,Chaudhuri S,Pal A K.Synthesis of CuInS2films by sulphurization of Cu/In stacked elemental layers[J].Solar Energy Materials&SolarCells,2000,60:323-339.
• [5]Pathan H M,Lokhande C D.Chemical deposition and characterzation of copper indium disulphide thin films[J].Applied Surface Science,2004,239:11-18.
• [6]Deok K S,Kim H J,Hoon Y K,et al.Effect of selenization precursor on CuInSe2 thin films selenized using co-sputtered Cu-In precursors[J].Materials&Solar Cells,2000,62(4):357-368.
• [7]石勇,靳正国,李春艳,等.SILAR法制备化学计量CuInS2薄膜[J].无机化学学报,2005,21(9):1285-1290.SHI Yong,JIN Zheng-Guo,LI Chun-Yan,et al.Preparation of stoichiometric CuInS2thin films by successive ironic layer absorption and reaction(SILAR)method[J].Chinese Journal of Inorganic Chemistry,2005,21(9):1285-1290.
• [8]Keppner,Klas T,K rner,et al.Compound formation at Cu-In thin-film interfaces detected by perturbedγ-γangular correlations[J].Phys Rev Lett,1985,54(21):2371-2374.
• [9]QIU Ji-jun,JIN Zheng-guo,Qian Jin-wen,et al.Ligar CuInS2films from various preparation conditions[J].Material Letters,2005,59:2735-2740.
• [10]徐明,柴春林,罗光明,等.真空退火对Ni80Fe20/Cu多层膜微结构的影响[J].物理学报,1999,48(增刊):8-16.XU Ming,CHAI Chun-lin,LUO Guang-ming,et al.Effect of annealing on microstructure of Ni80Fe20/Cu multilayer[J].Chinese Journal of Physics,1999,48(Sup):8-16.
• [11]He Y B,Polity A,Alves H R.Study on CuInS2thin films deposited by RF reactive sputtering[J].Thin Solid Films,2002,403-404:62.
• [12]Gupta,Isomura.Precursor modification for preparation of CIS films by selenization technique[J].Solar Energy Materials and Solar Cells,1998,53(3-4):385-401.
• [13]Kleinfeld,Wiemh fer.Chemical diffusion coefficients and stability of CuInS2and CuInSe2from polarization measurements with point electrodes[J].Solid StateIonics,1988,28-30:1111-1115.
• [14]epelák,Steinike,et al.High-temperature reactivity of mechano synthesized zinc ferrite[J].Solid State Ionics,1997,101-103:1343-1349.
• [15]Bardeleben,Schwab,Goltzene.Electron paramagnetic resonance of61Ni+in CuGaS2[J].Physics Letters A,1975,51(8):460-462.

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