离子注入辅助Al2O3陶瓷表面化学镀镀层特性研究Study on characteristics and technology of ion implantation-assisted electroless copper plating films on Al2O3 ceramics
王晓虹,孙智,王德奎,刘明
摘要(Abstract)：
用金属离子源在96Al2O3陶瓷表面注入不同能量和剂量的Ni离子,然后在镀液中进行化学镀铜。用扫描电镜、卢瑟福背散射能谱和X光电子能谱技术对注入层和镀层进行分析研究。结果表明:Ni离子注入可作为一种新的活化工艺,辅助Al2O3陶瓷化学镀铜;注入参数对后续化学镀覆有显著影响,注入获得表面Ni浓度高的镀覆效果较好,应选用低能量进行高剂量注入;试验条件下优选工艺参数为15keV,2.2×1017ions/cm2,该条件下开始化学镀铜的孕育期仅为45s,镀速达到52.43nm/min,镀层表面粗糙度为0.317μm,所得化学镀铜层均匀、致密,与基体结合紧密。
关键词(KeyWords)： 离子注入;Al2O3;活化;化学镀铜
基金项目(Foundation): 江苏省自然科学基金(DK2004032);; 中国矿业大学青年基金(2005A046)
作者(Author): 王晓虹,孙智,王德奎,刘明
参考文献(References)：
- [1]刘建国,陈存华,郑家.非金属材料化学镀工艺中基体表面活化方法的研究[J].表面技术,2002,31(3):5-8.LIU Jian-guo,CHEN Cun-hua,ZHENG Jia-shen.Research development of substrate surface activation methods in electroless plating process of nonmetallicmaterials[J].Surface Technology,2002,31(3):5-8.
- [2]谷新,王周成,林昌健.陶瓷表面化学镀的前处理工艺新进展[J].材料保护,2003,36(9):1-4.GU Xin,WANG Zhou-cheng,LIN Chang-jian.New developing of pretreatment process for electroless plating of ceramics[J].Materials Protection,2003,36(9):1-4.
- [3]刘燕萍,刘珍.胶体钯量对非金属材料的金属覆层性能的影响[J].电镀与精饰,1997,19(3):29-32.LIU Yan-ping,LIU Zhen.The effect of the quantity of colloid palladium on the properties of metal film on non-metalic material[J].Plating and Finishing,1997,19(3):29-32.
- [4]Muralidhar G K,Bhansali S,Pogany A,et al.Electron microscopy studies of ion implanted silicon for seeding electroless copper films[J].Journal of AppliedPhysics,1998,83(11):5709-5713.
- [5]Bhansali S,Sood D K.Selective seeding of copper films on polyimide-patterned silicon substrate,using ion implantation[J].Sensors and Actuators,1996,A52(1-3):126-131.
- [6]Bhansali S,Sood D K.A novel technique for fabrication of metallic structures on polyimide by selective electroless copper plating using ion implantation[J].Thin Solid Films,1995,270(1-2):489-492.
- [7]Li J H,Tsai Y Y,Chiu S Y,et al,Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth ofelectroless copper[J].Thin Solid Films,2000:377-378,592-596.
- [8]Samandi M,Gudze M,Evans P.Application of ion implantation to ceramic/metal joining[J].Nuclear Instruments and Methods in Physics Research B,1997,127-128:669-672.
- [9]Sood D K,Bhansali S,Evans P J,et al.Ion implantation for nucleation of electroless Ni films on〈100〉Si[J].Sensors and Actuators,1997,A62(1-3):705-710.
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