刘皓,陈良贤,魏俊俊,刘金龙,黑立富,李成明

• 1:北京科技大学新材料技术研究院

摘要(Abstract)：

采用射频磁控反应溅射在金刚石/Si衬底上制备不同Sc含量的Sc_xAl_(1-x)N薄膜,并研究了Sc掺杂对薄膜沉积速率、表面粗糙度、晶体取向及压电性能的影响。结果表明,薄膜沉积速率随Sc靶功率的增加近似呈线性增长;合适的Sc掺杂能降低Sc_xAl_(1-x)N薄膜的表面粗糙度,提高AlN的C轴择优取向程度,并增强薄膜的压电性能;在0~34%范围内Sc的最优掺杂量为19%,此时薄膜整体质量最高,其表面粗糙度为2.95 nm,AlN(002)取向摇摆曲线半高宽为2.8°,压电常数为11.6 pm/V。

关键词(KeyWords)： Sc掺杂;AlN/金刚石薄膜;粗糙度;择优取向;压电常数

Abstract:

Keywords:

基金项目(Foundation): 中央高校基本科研业务费专项基金(FRF-TP-15-110A1)

作者(Author): 刘皓,陈良贤,魏俊俊,刘金龙,黑立富,李成明

DOI: 10.13289/j.issn.1009-6264.2016.s1.027

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